IEEE - Institute of Electrical and Electronics Engineers, Inc. - Charge-up damage of dual gate transistor during RF pre-cleaning of metal contact before barrier metal deposition

1999 4th International Symposium on Plasma Process-Induced Damage

Author(s): Wan-Jae Park ; Kyoung-Sub Shin ; Ji-Soo Kim ; Chang-Jin Kang ; Tae-Hyuk Ahn ; Joo-Tae Moon ; Moon-Yong Lee
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: Monterey, CA, USA, USA
Conference Date: 9 May 1999
Page(s): 92 - 95
ISBN (Paper): 0-9651577-3-3
DOI: 10.1109/PPID.1999.798821
Regular:

The damage of dual gate (p-gate PMOS and n-gate NMOS) transistors during RF pre-cleaning of their metal contacts before barrier metal deposition has been investigated in logic devices by varying... View More

Advertisement