IEEE - Institute of Electrical and Electronics Engineers, Inc. - Evaluation of charging damage caused by the pattern structures during Al etching

1999 4th International Symposium on Plasma Process-Induced Damage

Author(s): Tamitani, N. ; Kogure, R. ; Takaoka, Y. ; Moriyama, I. ; Yamauchi, H. ; Takakura, Y. ; Park, S.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: Monterey, CA, USA, USA
Conference Date: 9 May 1999
Page(s): 80 - 83
ISBN (Paper): 0-9651577-3-3
DOI: 10.1109/PPID.1999.798818
Regular:

Aspect ratios increase as metal device design rules decrease and, in the current metal etching process, this higher aspect ratio has lead to increased electron shading (Hashimoto, 1993) which has... View More

Advertisement