IEEE - Institute of Electrical and Electronics Engineers, Inc. - Plasma damage impact on nMOS electrical characteristics during a CCS stress

1999 4th International Symposium on Plasma Process-Induced Damage

Author(s): Pantisano, L. ; Paccagnelle, A. ; Colombo, P. ; Valentini, M.G.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: Monterey, CA, USA, USA
Conference Date: 9 May 1999
Page(s): 73 - 76
ISBN (Paper): 0-9651577-3-3
DOI: 10.1109/PPID.1999.798816
Regular:

Plasma damage is generally evaluated by using suitable electrical stresses and characterisation techniques. Stress can induce both latent damage depassivation and new stress-induced defects. This... View More

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