IEEE - Institute of Electrical and Electronics Engineers, Inc. - Annealing of plasma charging damage and residual degradation in MOS transistors

1999 4th International Symposium on Plasma Process-Induced Damage

Author(s): Brozek, T.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: Monterey, CA, USA, USA
Conference Date: 9 May 1999
Page(s): 61 - 64
ISBN (Paper): 0-9651577-3-3
DOI: 10.1109/PPID.1999.798813
Regular:

This paper presents data on an important mode of plasma-induced damage, namely residual charging damage in MOS devices. The antenna dependence of residual degradation is observed in the device... View More

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