IEEE - Institute of Electrical and Electronics Engineers, Inc. - Pulse-time-modulated plasma etching for high performance polysilicon patterning on thin gate oxides

1999 4th International Symposium on Plasma Process-Induced Damage

Author(s): Ohtake, H. ; Samukawa, S. ; Noguchi, K. ; Iida, H. ; Sato, A. ; Xue-yu Qian
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: Monterey, CA, USA, USA
Conference Date: 9 May 1999
Page(s): 37 - 40
ISBN (Paper): 0-9651577-3-3
DOI: 10.1109/PPID.1999.798803
Regular:

This paper reports a high performance gate electrode patterning technology which uses a HBr-Cl/sub 2/-O/sub 2/ gas mixture in a pulse-time-modulated inductively-coupled plasma (ICP) etcher.... View More

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