IEEE - Institute of Electrical and Electronics Engineers, Inc. - An amorphous silicon blocking mask for MOSFET after gate channel implants and bipolar implants in advanced BiCMOS technology

1999 IEEE/SEMI Advanced Semiconductor Manufacturing Conference and Workshop. ASMC 99 Proceedings

Author(s): Woloszyn, J.B. ; Carbone, T.A. ; Hulfachor, R.B.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: Boston, Massachusetts, USA, USA
Conference Date: 8 September 1999
Page(s): 348 - 351
ISBN (Paper): 0-7803-5217-3
ISSN (Paper): 1078-8743
DOI: 10.1109/ASMC.1999.798263
Regular:

A thin amorphous silicon layer is used to protect the gate oxide from subsequent photoresist, implantation, and cleans during BiCMOS processing. Channel implantation after gate oxidation may then... View More

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