IEEE - Institute of Electrical and Electronics Engineers, Inc. - Power loss and junction temperature analysis of power semiconductor devices

Proceedings of 34th Annual Meeting of the IEEE Industry Applications

Author(s): Dewei Xu ; Haiwei Lu ; Lipei Huang ; Azuma, S. ; Kimata, M. ; Uchida, R.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: Phoenix, AZ, USA, USA
Conference Date: 3 October 1999
Volume: 1
ISBN (Paper): 0-7803-5589-X
ISSN (Paper): 0197-2618
DOI: 10.1109/IAS.1999.800030
Regular:

A new developed electro-thermal calculation method is implemented to estimate the power loss and working temperature of IGBT devices. Based on the measurement of IGBT characteristics, the exact... View More

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