IEEE - Institute of Electrical and Electronics Engineers, Inc. - Performance characterization of integrated gate commutated thyristors

Proceedings of 34th Annual Meeting of the IEEE Industry Applications

Author(s): Gutierrez, M. ; Venkataramanan, G. ; Sundaram, A.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: Phoenix, AZ, USA, USA
Conference Date: 3 October 1999
Volume: 1
ISBN (Paper): 0-7803-5589-X
ISSN (Paper): 0197-2618
DOI: 10.1109/IAS.1999.799981
Regular:

Power semiconductor devices that combine the technology of MOS turn-off and bipolar conduction have been introduced for operation at at high voltage and high current levels. Integrated gate... View More

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