IEEE - Institute of Electrical and Electronics Engineers, Inc. - A comparative evaluation of new silicon carbide diodes and state-of-the-art silicon diodes for power electronic applications

Proceedings of 34th Annual Meeting of the IEEE Industry Applications

Author(s): Elasser, A. ; Kheraluwala, M. ; Ghezzo, M. ; Steigerwald, R. ; Krishnamurthy, N. ; Kretchmer, J. ; Chow, T.P.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: Phoenix, AZ, USA, USA
Conference Date: 3 October 1999
Volume: 1
ISBN (Paper): 0-7803-5589-X
ISSN (Paper): 0197-2618
DOI: 10.1109/IAS.1999.799976
Regular:

Recent progress in silicon carbide (SiC) material has made it feasible to build power devices of reasonable current density. This paper presents recent results including a comparison with... View More

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