IEEE - Institute of Electrical and Electronics Engineers, Inc. - A novel simple shallow trench isolation (SSTI) technology using high selective CeO/sub 2/ slurry and liner SiN as a CMP stopper

1999 Symposium on VLSI Technology. Digest of Technical Papers

Author(s): T. Park ; J.Y. Kim ; K.W. Park ; H.S. Lee ; H.B. Shin ; Y.H. Kim ; M.H. Park ; H.K. Kang ; M.Y. Lee
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: Kyoto, Japan, Japan
Conference Date: 14 June 1999
Page Count: 2
Page(s): 159 - 160
ISBN (Paper): 4-930813-93-X
DOI: 10.1109/VLSIT.1999.799392
Regular:

A novel simple shallow trench isolation technology, SSTI, has been developed. SSTI consists of direct trench etching masked only with the photoresist, trench oxidation, liner SiN deposition, CVD... View More

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