IEEE - Institute of Electrical and Electronics Engineers, Inc. - RF noise simulation for submicron MOSFET's based on hydrodynamic model

1999 Symposium on VLSI Technology. Digest of Technical Papers

Author(s): Jung-Suk Goo ; Chang-Hoon Choi ; E. Morifuji ; H.S. Momose ; Zhiping Yu ; H. Iwai ; T.H. Lee ; R.W. Dutton
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: Kyoto, Japan, Japan
Conference Date: 14 June 1999
Page Count: 2
Page(s): 153 - 154
ISBN (Paper): 4-930813-93-X
DOI: 10.1109/VLSIT.1999.799389
Regular:

As the cut-off frequency of CMOS technology improves, RF designs are increasingly taking advantage of CMOS technology due to the promise of integrating whole systems on a single chip. Although... View More

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