IEEE - Institute of Electrical and Electronics Engineers, Inc. - A 0.15-/spl mu/m/73-GHz f/sub max/ RF BiCMOS technology using cobalt silicide ring extrinsic-base structure

1999 Symposium on VLSI Technology. Digest of Technical Papers

Author(s): H. Suzuki ; H. Yoshida ; Y. Kinoshita ; H. Fujii ; T. Yamazaki
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: Kyoto, Japan, Japan
Conference Date: 14 June 1999
Page Count: 2
Page(s): 149 - 150
ISBN (Paper): 4-930813-93-X
DOI: 10.1109/VLSIT.1999.799387
Regular:

This paper presents an advanced RF mixed-signal BiCMOS technology. A single-polysilicon bipolar transistor with a high maximum frequency of oscillation (f/sub max/) is successfully implemented... View More

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