IEEE - Institute of Electrical and Electronics Engineers, Inc. - Fully functional 0.5-/spl mu/m 64-kbit embedded SBT FeRAM using a new low temperature SBT deposition technique

1999 Symposium on VLSI Technology. Digest of Technical Papers

Author(s): T. Eshita ; K. Nakamura ; M. Mushiga ; A. Itho ; S. Miyagaki ; H. Yamawaki ; M. Aoki ; S. Kishii ; Y. Arimoto
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: Kyoto, Japan, Japan
Conference Date: 14 June 1999
Page Count: 2
Page(s): 139 - 140
ISBN (Paper): 4-930813-93-X
DOI: 10.1109/VLSIT.1999.799382
Regular:

0.5 /spl mu/m design rule embedded 64 kbit SBT (SrBi/sub 2/(Ta,Nb)/sub 2/O/sub 9/) FeRAMs (ferroelectric RAM) are fabricated using a new low temperature SBT deposition technique. The developed... View More

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