IEEE - Institute of Electrical and Electronics Engineers, Inc. - Re-distribution of Cu contamination in advanced high-speed CMOS and its influence on device characteristics

1999 Symposium on VLSI Technology. Digest of Technical Papers

Author(s): K. Hozawa ; T. Itoga ; S. Isomae ; M. Ohkura
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: Kyoto, Japan, Japan
Conference Date: 14 June 1999
Page Count: 2
Page(s): 129 - 130
ISBN (Paper): 4-930813-93-X
DOI: 10.1109/VLSIT.1999.799377
Regular:

Cu contamination will be a crucial concern in advanced high-speed CMOS fabrication using Cu wiring. We evaluated the Cu gettering efficiency of Si wafers quantitatively by counting the Cu atoms... View More

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