IEEE - Institute of Electrical and Electronics Engineers, Inc. - Balanced electron drift oxide etcher with Xe added gas chemistry for low cost and high performance contact metallization

1999 Symposium on VLSI Technology. Digest of Technical Papers

Author(s): H. Komeda ; M. Hirayama ; Y. Hirayama ; K. Ino ; R. Kaihara ; T. Ohmi
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: Kyoto, Japan, Japan
Conference Date: 14 June 1999
Page Count: 2
Page(s): 127 - 128
ISBN (Paper): 4-930813-93-X
DOI: 10.1109/VLSIT.1999.799376
Regular:

A new plasma source called balanced electron drift (BED) magnetron plasma was developed for SiO/sub 2/ contact/via hole etching. E/spl times/B drift of electrons, which is notorious for degrading... View More

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