IEEE - Institute of Electrical and Electronics Engineers, Inc. - Improvement of 1/f noise by using VHP (vertical high pressure) oxynitride gate insulator for deep-sub micron RF and analog CMOS

1999 Symposium on VLSI Technology. Digest of Technical Papers

Author(s): H. Kimijima ; B. Evans ; B. Acker ; J. Bloom ; H. Mabuchi ; Dim-Lee Kwong ; E. Morifuji ; T. Yoshitomi ; H.S. Momose ; M. Kinugawa ; H. Iwai
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: Kyoto, Japan, Japan
Conference Date: 14 June 1999
Page Count: 2
Page(s): 119 - 120
ISBN (Paper): 4-930813-93-X
DOI: 10.1109/VLSIT.1999.799372
Regular:

The 1/f noise in MOSFETs using VHP (vertical high pressure) oxynitride gate insulator was studied. The 1/f noise is degraded by conventional oxynitride gate insulators. It was found that 1/f noise... View More

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