IEEE - Institute of Electrical and Electronics Engineers, Inc. - R-2 gate insulator;Hi-k vs. SiO/sub 2/

1999 Symposium on VLSI Technology. Digest of Technical Papers

Author(s): A. Toriumi ; H. Huff
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: Kyoto, Japan, Japan
Conference Date: 14 June 1999
Page Count: 1
Page(s): 113
ISBN (Paper): 4-930813-93-X
DOI: 10.1109/VLSIT.1999.799367
Regular:

Summary form only given. The International Technology Roadmap for Semiconductors (ITRS) has monitored the evolution of the gate dielectric equivalent oxide thickness with technology node. The... View More

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