IEEE - Institute of Electrical and Electronics Engineers, Inc. - Leakage-current mechanism of a tantalum-pentoxide capacitor on rugged Si with a CVD-TiN plate electrode for high-density DRAMs

1999 Symposium on VLSI Technology. Digest of Technical Papers

Author(s): H. Miki ; M. Kunitomo ; R. Furukawa ; T. Tamaru ; H. Goto ; S. Iijima ; Y. Ohji ; H. Yamamoto ; J. Kuroda ; T. Kisu ; I. Asano
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: Kyoto, Japan, Japan
Conference Date: 14 June 1999
Page Count: 2
Page(s): 99 - 100
ISBN (Paper): 4-930813-93-X
DOI: 10.1109/VLSIT.1999.799359
Regular:

The leakage current behaviour of a high-k tantalum-pentoxide capacitor on a rugged poly-Si bottom electrode with CVD-TiN as a plate electrode was studied to determine the leakage current... View More

Advertisement