IEEE - Institute of Electrical and Electronics Engineers, Inc. - Work function controlled metal gate electrode on ultrathin gate insulators
1999 Symposium on VLSI Technology. Digest of Technical Papers
Author(s): | K. Nakajima ; Y. Akasaka ; M. Kaneko ; M. Tamaoki ; Y. Yamada ; T. Shimizu ; Y. Ozawa ; K. Suguro |
Publisher: | IEEE - Institute of Electrical and Electronics Engineers, Inc. |
Publication Date: | 1 January 1999 |
Conference Location: | Kyoto, Japan, Japan |
Conference Date: | 14 June 1999 |
Page Count: | 2 |
Page(s): | 95 - 96 |
ISBN (Paper): | 4-930813-93-X |
DOI: | 10.1109/VLSIT.1999.799357 |
Regular:
We investigated MOS characteristics of metal gate electrodes on ultrathin gate oxide. Gate leakage currents of sputtered TiN and WN/sub x/ electrodes were found to be much higher than that of CVD... View More