IEEE - Institute of Electrical and Electronics Engineers, Inc. - Work function controlled metal gate electrode on ultrathin gate insulators

1999 Symposium on VLSI Technology. Digest of Technical Papers

Author(s): K. Nakajima ; Y. Akasaka ; M. Kaneko ; M. Tamaoki ; Y. Yamada ; T. Shimizu ; Y. Ozawa ; K. Suguro
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: Kyoto, Japan, Japan
Conference Date: 14 June 1999
Page Count: 2
Page(s): 95 - 96
ISBN (Paper): 4-930813-93-X
DOI: 10.1109/VLSIT.1999.799357
Regular:

We investigated MOS characteristics of metal gate electrodes on ultrathin gate oxide. Gate leakage currents of sputtered TiN and WN/sub x/ electrodes were found to be much higher than that of CVD... View More

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