IEEE - Institute of Electrical and Electronics Engineers, Inc. - 65 nm physical gate length NMOSFETs with heavy ion implanted pockets and highly reliable 2 nm-thick gate oxide for 1.5 V operation

1999 Symposium on VLSI Technology. Digest of Technical Papers

Author(s): C. Caillat ; S. Deleonibus ; G. Guegan ; S. Tedesco ; B. Dal'zotto ; M. Heitzmann ; F. Martin ; P. Mur ; B. Marchand ; F. Balestra
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: Kyoto, Japan, Japan
Conference Date: 14 June 1999
Page Count: 2
Page(s): 89 - 90
ISBN (Paper): 4-930813-93-X
DOI: 10.1109/VLSIT.1999.799354
Regular:

For the first time, 65 nm physical gate length NMOS devices combining heavy ion (gallium, indium) implanted pockets and low leakage, highly reliable 2 nm-thick gate oxide are reported. Indium... View More

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