IEEE - Institute of Electrical and Electronics Engineers, Inc. - Quantum effect in oxide thickness determination from capacitance measurement

1999 Symposium on VLSI Technology. Digest of Technical Papers

Author(s): K. Yang ; Ya-Chin King ; Chenming Hu
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: Kyoto, Japan, Japan
Conference Date: 14 June 1999
Page Count: 2
Page(s): 77 - 78
ISBN (Paper): 4-930813-93-X
DOI: 10.1109/VLSIT.1999.799348
Regular:

Simple quantitative models of charge displacement due to the quantum effect and its influence on gate oxide thickness measurements are presented. An effective oxide thickness (T/sub DC/) is... View More

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