IEEE - Institute of Electrical and Electronics Engineers, Inc. - Channel engineering for 0.2 /spl mu/m surface channel pMOSFETs using electron beam irradiation

1999 Symposium on VLSI Technology. Digest of Technical Papers

Author(s): J.M. Ha ; S.H. Kim ; W.S. Kim ; J.-H. Ku ; H.J. Lee ; J.W. Park ; K. Fujihara ; H.K. Kang ; M.Y. Lee
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: Kyoto, Japan, Japan
Conference Date: 14 June 1999
Page Count: 2
Page(s): 71 - 72
ISBN (Paper): 4-930813-93-X
DOI: 10.1109/VLSIT.1999.799345
Regular:

The electron beam (EB) irradiation process has been investigated to control the channel dopant profile of 0.2 /spl mu/m surface channel pMOSFETs for the first time. The results show that the... View More

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