IEEE - Institute of Electrical and Electronics Engineers, Inc. - Indium tilted channel implantation technology for 60 nm nMOSFET

1999 Symposium on VLSI Technology. Digest of Technical Papers

Author(s): Y. Momiyama ; S. Yamaguchi ; S. Ohkubo ; T. Sugii
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: Kyoto, Japan, Japan
Conference Date: 14 June 1999
Page Count: 2
Page(s): 67 - 68
ISBN (Paper): 4-930813-93-X
DOI: 10.1109/VLSIT.1999.799343
Regular:

We have developed a new laterally modulated channel technology that enables complete operation of 60 nm nMOSFETs using a tilted In implantation. This improves short channel immunity over the... View More

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