IEEE - Institute of Electrical and Electronics Engineers, Inc. - Dielectric breakdown mechanism of thin-SiO/sub 2/ studied by the post-breakdown resistance statistics

1999 Symposium on VLSI Technology. Digest of Technical Papers

Author(s): H. Satake ; A. Toriumi
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: Kyoto, Japan, Japan
Conference Date: 14 June 1999
Page Count: 2
Page(s): 61 - 62
ISBN (Paper): 4-930813-93-X
DOI: 10.1109/VLSIT.1999.799340
Regular:

We have noticed for the first time that the post-breakdown resistance of SiO/sub 2/ in MOS devices is strongly related to SiO/sub 2/ breakdown characteristics such as the polarity dependence or... View More

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