IEEE - Institute of Electrical and Electronics Engineers, Inc. - Temperature acceleration of oxide breakdown and its impact on ultra-thin gate oxide reliability

1999 Symposium on VLSI Technology. Digest of Technical Papers

Author(s): R. Degraeve ; N. Pangon ; B. Kaczer ; T. Nigam ; G. Groeseneken ; A. Naem
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: Kyoto, Japan, Japan
Conference Date: 14 June 1999
Page Count: 2
Page(s): 59 - 60
ISBN (Paper): 4-930813-93-X
DOI: 10.1109/VLSIT.1999.799339
Regular:

A systematic study of oxide reliability is presented in the thickness range 13.8 nm to 2.8 nm. It is demonstrated that (i) the time-to-breakdown should be extrapolated as a function of gate... View More

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