IEEE - Institute of Electrical and Electronics Engineers, Inc. - A concept of gate oxide lifetime limited by "B-mode" stress induced leakage currents in direct tunneling regime

1999 Symposium on VLSI Technology. Digest of Technical Papers

Author(s): K. Okada ; H. Kubo ; A. Ishinaga ; K. Yoneda
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: Kyoto, Japan, Japan
Conference Date: 14 June 1999
Page Count: 2
Page(s): 57 - 58
ISBN (Paper): 4-930813-93-X
DOI: 10.1109/VLSIT.1999.799338
Regular:

To realize further advances in MOS ULSIs, thin gate oxides in the direct tunneling regime (<3 nm) are strongly required. In this regime, the most important issue is the soft breakdown (SBD)... View More

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