IEEE - Institute of Electrical and Electronics Engineers, Inc. - Aluminum word line and bit line fabrication technology for COB DRAM using a polysilicon-aluminum substitute

1999 Symposium on VLSI Technology. Digest of Technical Papers

Author(s): S. Nakamura ; R. Suzuki ; M. Fukuda ; M. Kobayashi ; A. Hatada
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: Kyoto, Japan, Japan
Conference Date: 14 June 1999
Page Count: 2
Page(s): 35 - 36
ISBN (Paper): 4-930813-93-X
DOI: 10.1109/VLSIT.1999.799327
Regular:

It is possible to employ the low resistance (but low melting point) material aluminum in word lines and bit lines for COB (capacitor-over-bit line) type DRAM or DRAM/logic, even though high... View More

Advertisement