IEEE - Institute of Electrical and Electronics Engineers, Inc. - Minimizing body instability in deep sub-micron SOI MOSFETs for sub-1 V RF applications

1999 Symposium on VLSI Technology. Digest of Technical Papers

Author(s): Y.-C. Tseng ; W.M. Huang ; M. Mendicino ; P. Welch ; V. Ilderem ; J.C.S. Woo
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: Kyoto, Japan, Japan
Conference Date: 14 June 1999
Page Count: 2
Page(s): 27 - 28
ISBN (Paper): 4-930813-93-X
DOI: 10.1109/VLSIT.1999.799323
Regular:

We report an extensive study on the SOI body instability and the noise constraint dependence on device scaling for sub-1 V RF SOI CMOS applications. Also, the device parameters associated with... View More

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