IEEE - Institute of Electrical and Electronics Engineers, Inc. - 0.18 /spl mu/m metal gate fully-depleted SOI MOSFETs for advanced CMOS applications

1999 Symposium on VLSI Technology. Digest of Technical Papers

Author(s): J. Chen ; B. Maiti ; D. Connelly ; M. Mendicino ; F. Huang ; O. Adetutu ; Y. Yu ; D. Weddington ; W. Wu ; J. Candelaria ; D. Dow ; P. Tobin ; J. Mogab
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: Kyoto, Japan, Japan
Conference Date: 14 June 1999
Page Count: 2
Page(s): 25 - 26
ISBN (Paper): 4-930813-93-X
DOI: 10.1109/VLSIT.1999.799322
Regular:

We report here for the first time a 0.18 /spl mu/m fully-depleted SOI process with PVD TiN metal gate. As midgap work function metal gate and very light channel doping were used, threshold voltage... View More

Advertisement