IEEE - Institute of Electrical and Electronics Engineers, Inc. - Important properties of transient thermal impedance for MOS-gated power semiconductors

Proceedings of ISIE '99. IEEE International Symposium on Industrial Electronics

Author(s): Jakopovic, Z. ; Bencic, Z. ; Kolonic, F.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: Bled, Slovenia, Slovenia
Conference Date: 12 July 1999
Volume: 2
ISBN (Paper): 0-7803-5662-4
DOI: 10.1109/ISIE.1999.798675
Regular:

Important properties of transient thermal impedance (TTI) for MOS-gated power semiconductors are investigated on the basis of measurement results. An electrical method of transient thermal... View More

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