IEEE - Institute of Electrical and Electronics Engineers, Inc. - Study of Ionizing Radiation Damage in MOS Structures Using Internal Photoemission

Author(s): J. L. Peel ; R. C. Eden
Sponsor(s): IEEE Nuclear and Plasma Sciences Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 December 1971
Volume: 18
Page(s): 84 - 90
ISSN (Paper): 0018-9499
ISSN (Online): 1558-1578
DOI: 10.1109/TNS.1971.4326417
Regular:

The effects of ionizing radiation in large-geometry MOS structures were studied by use of internal photoemission techniques. Barrier heights at both the silicon-silicon dioxide and the silicon... View More

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