IEEE - Institute of Electrical and Electronics Engineers, Inc. - Fluorine effects on silicidation of BF/sub 2//sup +/-implanted narrow poly lines

Proceedings of the IEEE 1999 International Interconnect Technology Conference

Author(s): Yap, C.W. ; Soh-Yun Siah ; Lim, E.H. ; Lee, T.K. ; Gn, F.H.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: San Francisco, CA, USA, USA
Conference Date: 26 May 1999
Page(s): 38 - 40
ISBN (Paper): 0-7803-5174-6
DOI: 10.1109/IITC.1999.787071
Regular:

The use of BF/sub 2//sup +/ for p/sup +/ source/drain implant has resulted in void formation in TiSi/sub 2/ films on p/sup +/ poly and diffusion regions due to the interaction between fluorine... View More

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