IEEE - Institute of Electrical and Electronics Engineers, Inc. - Lateral bipolar transistor fabricated on a deep-submicron technology

Proceedings of the Thirteenth Biennial University/Government/Industry Microelectronics Symposium

Author(s): Gomez, R. ; Neudeck, G.W. ; Bashir, R.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: Minneapolis, MN, USA
Conference Date: 23 June 1999
Page(s): 37 - 42
ISBN (Paper): 0-7803-5240-8
ISSN (Paper): 0749-6877
DOI: 10.1109/UGIM.1999.782818
Regular:

The performance of a NPN Lateral Bipolar Transistor (LBJT), based on a minimally modified submicron MOSFET without gate oxide, was studied by means of simulations and measurements on fabricated... View More

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