IEEE - Institute of Electrical and Electronics Engineers, Inc. - High permittivity gate insulators TiO/sub 2/ and ZrO/sub 2/

Proceedings of the Thirteenth Biennial University/Government/Industry Microelectronics Symposium

Author(s): He, B. ; Hoilien, N. ; Smith, R. ; Ma, T. ; Taylor, C. ; St. Omer, I. ; Campbell, S.A. ; Gladfelter, W.L. ; Gribelyuk, M. ; Buchanan, D.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: Minneapolis, MN, USA
Conference Date: 23 June 1999
Page(s): 33 - 36
ISBN (Paper): 0-7803-5240-8
ISSN (Paper): 0749-6877
DOI: 10.1109/UGIM.1999.782817
Regular:

Polycrystalline films of TiO/sub 2/ and ZrO/sub 2/ have been deposited from their respective tetranitrato precursors. Film microstructure has been examined. The leakage current depends on the... View More

Advertisement