IEEE - Institute of Electrical and Electronics Engineers, Inc. - Multiple-valued content-addressable memory using metal-ferroelectric-semiconductor FETs

Proceedings of the 29th International Symposium on Multiple-Valued Logic

Author(s): Hanyu, T. ; Kimura, H. ; Kameyama, M.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: Freiburg, Germany, Germany
Conference Date: 20 May 1999
Page(s): 30 - 35
ISBN (Paper): 0-7695-0161-3
ISSN (Paper): 0195-623X
DOI: 10.1109/ISMVL.1999.779691
Regular:

This paper presents a design of a non-volatile multiple-valued content-addressable memory (MVCAM) using metal-ferroelectric-semiconductor (MFS) FETs. An MFSFET is an important device with a... View More

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