IEEE - Institute of Electrical and Electronics Engineers, Inc. - A 3.2-V operation single-chip AlGaAs/GaAs HBT MMIC power amplifier for GSM900/1800 dual-band applications

1999 IEEE MTT-S International Microwave Symposium Digest

Author(s): K. Yamamoto ; T. Shimura ; T. Asada ; T. Okuda ; K. Mori ; K. Choumei ; S. Suzuki ; T. Miura ; S. Fujimoto ; R. Hattori ; H. Nakano ; K. Hosogi ; J. Otsuji ; A. Inoue ; K. Yajima ; T. Ogata ; M. Yamanouchi
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: Anaheim, CA, USA, USA
Conference Date: 13 June 1999
Volume: 4
Page Count: 4
ISBN (Paper): 0-7803-5135-5
DOI: 10.1109/MWSYM.1999.780210
Regular:

A 3.2-V operation single-chip HBT MMIC power amplifier has been successfully developed for GSM900/1800 applications, featuring on-chip bias circuits switched in turn between 900 MHz and 1800 MHz.... View More

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