IEEE - Institute of Electrical and Electronics Engineers, Inc. - Progress in high power SiC microwave MESFETs

1999 IEEE MTT-S International Microwave Symposium Digest

Author(s): S.T. Allen ; W.L. Pribble ; R.A. Sadler ; T.S. Alcorn ; Z. Ring ; J.W. Palmour
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: Anaheim, CA, USA, USA
Conference Date: 13 June 1999
Volume: 1
Page Count: 4
ISBN (Paper): 0-7803-5135-5
DOI: 10.1109/MWSYM.1999.779484
Regular:

SiC MESFET's have shown an RF power density of 4.6 W/mm at 3.5 GHz and a power added efficiency of 60% with 3 W/mm at 800 MHz, demonstrating that SiC devices are capable of very high power... View More

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