IEEE - Institute of Electrical and Electronics Engineers, Inc. - A general parameter extraction method for transistor noise models with correlation

1999 IEEE MTT-S International Microwave Symposium Digest

Author(s): J. Stenarson ; M. Garcia ; I. Angelov ; H. Zirath
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: Anaheim, CA, USA, USA
Conference Date: 13 June 1999
Volume: 1
Page Count: 4
ISBN (Paper): 0-7803-5135-5
DOI: 10.1109/MWSYM.1999.779437
Regular:

A new general direct extraction procedure for transistor noise models including two correlated noise sources is developed. The extraction procedure is demonstrated for a Silicon Carbide (SiC)... View More

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