IEEE - Institute of Electrical and Electronics Engineers, Inc. - Physics-based FET noise model applicable to millimeter-wave frequencies

1999 IEEE MTT-S International Microwave Symposium Digest

Author(s): Daehee Lee ; Youngwoo Kwon ; Hong-Shick Min
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: Anaheim, CA, USA, USA
Conference Date: 13 June 1999
Volume: 1
Page Count: 4
ISBN (Paper): 0-7803-5135-5
DOI: 10.1109/MWSYM.1999.779436
Regular:

A physics-based FET noise model applicable to MM-wave frequencies is presented. The noise model is based on the short-circuit noise current derived from a 2-D noise equi-potential surface... View More

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