IEEE - Institute of Electrical and Electronics Engineers, Inc. - Low noise metamorphic HEMT devices and amplifiers on GaAs substrates

1999 IEEE MTT-S International Microwave Symposium Digest

Author(s): P.F. Marsh ; S.L.G. Chu ; S.M. Lardizabal ; R.E. Leoni, III ; S. Kang ; R. Wohlert ; A.M. Bowlby ; W.E. Hoke ; R.A. McTaggart ; C.S. Whelan ; P.J. Lemonias ; P.M. McIntosh ; T.E. Kazior
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: Anaheim, CA, USA, USA
Conference Date: 13 June 1999
Volume: 1
Page Count: 4
ISBN (Paper): 0-7803-5135-5
DOI: 10.1109/MWSYM.1999.779435
Regular:

Excellent noise (0.41 dB minimum noise figure with 11.5 dB associated gain at 18 GHz) and linearity (third order intercept point of 37.6 dBm at 42.5 mW DC power giving a linearity figure of merit... View More

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