IEEE - Institute of Electrical and Electronics Engineers, Inc. - Nonlinear modeling of a SiGe HBT with applications to ultra low phase noise dielectric resonator oscillators

1999 IEEE MTT-S International Microwave Symposium Digest

Author(s): M. Regis ; O. Llopis ; L. Escotte ; R. Plana ; A. Gruhle ; T.J. Brazil ; M. Chaubet ; J. Graffeuil
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: Anaheim, CA, USA, USA
Conference Date: 13 June 1999
Volume: 1
Page Count: 4
ISBN (Paper): 0-7803-5135-5
DOI: 10.1109/MWSYM.1999.779430
Regular:

We propose a large signal model for a packaged SiGe heterojunction bipolar transistor. Pulsed I-V measurements are used to avoid thermal effects. The current model yields excellent correlation... View More

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