IEEE - Institute of Electrical and Electronics Engineers, Inc. - Thick metal CMOS technology on high resistivity substrate for monolithic 980 MHz and 1.9 GHz CMOS LNAs

1999 IEEE MTT-S International Microwave Symposium Digest

Author(s): C.S. Kim ; M. Park ; C.H. Kim ; H.K. Yu ; Yu.K. Lee ; D.Y. Kim ; H. Cho
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: Anaheim, CA, USA, USA
Conference Date: 13 June 1999
Volume: 2
Page Count: 4
ISBN (Paper): 0-7803-5135-5
DOI: 10.1109/MWSYM.1999.779827
Regular:

Thick metal CMOS technology on high resistivity substrate (RF CMOS technology) is demonstrated for the RF IC applications, and we firstly implemented it in monolithic 900 MHz and 1.9 GHz LNAs. The... View More

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