IEEE - Institute of Electrical and Electronics Engineers, Inc. - Large-signal characteristics of AlGaN/GaN power MODFETs

1999 IEEE MTT-S International Microwave Symposium Digest

Author(s): E. Alekseev ; D. Pavlidis ; N.X. Nguyen ; C. Nguyen ; D.E. Grider
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: Anaheim, CA, USA, USA
Conference Date: 13 June 1999
Volume: 2
Page Count: 4
ISBN (Paper): 0-7803-5135-5
DOI: 10.1109/MWSYM.1999.779818
Regular:

This work addresses the scalability of power performance of AlGaN/GaN MODFETs with large gate periphery, as necessary for microwave power devices. High-frequency large-signal characteristics of... View More

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