IEEE - Institute of Electrical and Electronics Engineers, Inc. - Nonlinear FET model for intermodulation distortion analysis of resistive mixers

1999 IEEE MTT-S International Microwave Symposium Digest

Author(s): K. Fujii ; Y. Hara ; T. Yakabe ; H. Yabe
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: Anaheim, CA, USA, USA
Conference Date: 13 June 1999
Volume: 2
Page Count: 4
ISBN (Paper): 0-7803-5135-5
DOI: 10.1109/MWSYM.1999.779817
Regular:

This paper describes an improved nonlinear model for predicting an intermodulation distortion (IMD) power characteristic of GaAs FETs in switching applications. The model is capable of modeling... View More

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