IEEE - Institute of Electrical and Electronics Engineers, Inc. - A large-signal model of self-aligned gate GaAs FETs for high-efficiency power amplifier design

1999 IEEE MTT-S International Microwave Symposium Digest

Author(s): M. Hirose ; Y. Kitaura ; N. Uchitomi
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: Anaheim, CA, USA, USA
Conference Date: 13 June 1999
Volume: 2
Page Count: 4
ISBN (Paper): 0-7803-5135-5
DOI: 10.1109/MWSYM.1999.779813
Regular:

A large-signal model which can simulate the power-added efficiency of p-pocket self-aligned gate GaAs MESFETs its proposed. This model includes a new drain current model and a gate bias dependent... View More

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