IEEE - Institute of Electrical and Electronics Engineers, Inc. - 1.9 GHz/5.8 GHz-band on-chip matching Si-MMIC low noise amplifiers fabricated on high resistive Si substrate

1999 IEEE MTT-S International Microwave Symposium Digest

Author(s): M. Ono ; N. Suematsu ; S. Kubo ; Y. Iyama ; T. Takagi ; O. Ishida
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: Anaheim, CA, USA, USA
Conference Date: 13 June 1999
Volume: 2
Page Count: 4
ISBN (Paper): 0-7803-5135-5
DOI: 10.1109/MWSYM.1999.779809
Regular:

The use of high resistive Si substrate, instead of conventional low resistive Si substrate, enables one to reduce the loss of spiral inductor for on-chip matching circuit by 61% at 1.9 GHz and by... View More

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