IEEE - Institute of Electrical and Electronics Engineers, Inc. - Noise characterization of MOSFETs for RF oscillator design

1999 IEEE MTT-S International Microwave Symposium Digest

Author(s): H. Aoki ; M. Shimasue
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: Anaheim, CA, USA, USA
Conference Date: 13 June 1999
Volume: 2
Page Count: 4
ISBN (Paper): 0-7803-5135-5
DOI: 10.1109/MWSYM.1999.779793
Regular:

This paper presents 1/f noise measurement and modeling techniques of sub-micron MOSFETs. The capacitor and inductor free biasing circuit enables quick bias tuning. A new MOSFET 1/f noise model has... View More

Advertisement