IEEE - Institute of Electrical and Electronics Engineers, Inc. - A new dynamic electro-thermal nonlinear model for silicon RF LDMOS FETs

1999 IEEE MTT-S International Microwave Symposium Digest

Author(s): W.R. Curtice ; J.A. Pla ; D. Bridges ; T. Liang ; E.E. Shumate
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: Anaheim, CA, USA, USA
Conference Date: 13 June 1999
Volume: 2
Page Count: 4
ISBN (Paper): 0-7803-5135-5
DOI: 10.1109/MWSYM.1999.779792
Regular:

The development and behavior of a new model for Motorola's LDMOS transistor is described. The model includes self-heating effects, produces accurate small-signal simulations as well as... View More

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