IEEE - Institute of Electrical and Electronics Engineers, Inc. - High efficiency 0.4 /spl mu/m gate LDMOS power FET for low voltage wireless communications

1999 IEEE MTT-S International Microwave Symposium Digest

Author(s): G. Ma ; W. Burger ; M. Shields
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: Anaheim, CA, USA, USA
Conference Date: 13 June 1999
Volume: 3
Page Count: 4
ISBN (Paper): 0-7803-5135-5
DOI: 10.1109/MWSYM.1999.779601
Regular:

A low cost, high efficiency 4th generation silicon MOSFET using RFLDMOS (LV4) 0.4 /spl mu/m technology is presented which has been developed for high frequency (1-2 GHz) and low voltage (2.2-12.5... View More

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