IEEE - Institute of Electrical and Electronics Engineers, Inc. - High breakdown voltage InAlGaAs/In/sub 0.32/Ga/sub 0.68/As metamorphic HEMT for microwave and MM-wave power applications

1999 IEEE MTT-S International Microwave Symposium Digest

Author(s): C.S. Whelan ; W.E. Hoke ; R.A. McTaggart ; P.S. Lyman ; P.F. Marsh ; R.E. Leoni, III ; S.J. Lichwala ; T.E. Kazior
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: Anaheim, CA, USA, USA
Conference Date: 13 June 1999
Volume: 3
Page Count: 4
ISBN (Paper): 0-7803-5135-5
DOI: 10.1109/MWSYM.1999.779599
Regular:

Metamorphic HEMTs are an attractive candidate for microwave and MM-wave power applications. However, poor on-state breakdown voltage has limited their use by requiring drain voltages less than or... View More

Advertisement